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Results 1 to 25 of 549

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Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe DepositionBENSON, J. D; BUBULAC, L. O; CHEN, Y et al.Journal of electronic materials. 2014, Vol 43, Num 11, pp 3993-3998, issn 0361-5235, 6 p.Article

The study on Schottky contact between Au and clean CdZnTeGANGQIANG ZHA; WANQI JIE; DONGMEI ZENG et al.Surface science. 2006, Vol 600, Num 12, pp 2629-2632, issn 0039-6028, 4 p.Article

Performance of RENA-3 IC with Position-Sensitive Solid-State DetectorsTURNER, Tumay O; CAJIPE, Victoria B; CLAJUS, Martin et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7079, pp 70791F.1-70791F.10, issn 0277-786X, isbn 978-0-8194-7299-1 0-8194-7299-9Conference Paper

Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared AstronomyPIQUETTE, E. C; EDWALL, D. D; ARNOLD, H et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1396-1400, issn 0361-5235, 5 p.Conference Paper

The Research of package for CdZnTe Detector based on the Capacitive Frisch Grid StructureQIN, Kai-Feng; WANG, Lin-Jun; MIN, Jia-Hua et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7385, issn 0277-786X, isbn 978-0-8194-7666-1 0-8194-7666-8, 73851Q.1-73851Q.6Conference Paper

Transmission optique dans la queue de Urbach de CdZnTe et réalisation de portes logiques tout-optiques = Optical transmission in the Urbach tail of CdZnTe and realization of all-optical logical gatesNardo, Laurent; Collet, Jacques.1992, 160 p.Thesis

The effect of hydrogen plasma treatment on the Au―CdZnTe interfaceJIAHUA MIN; HUI LI; KAIFENG QIN et al.Surface & coatings technology. 2013, Vol 228, issn 0257-8972, S97-S100, SUP1Conference Paper

Influences of Te-Rich and Cd-Rich Precipitates of CdZnTe Substrates on the Surface Defects of HgCdTe Liquid-Phase Epitaxy MaterialsFENGFENG SHENG; CHANGHE ZHOU; SHIWEN SUN et al.Journal of electronic materials. 2014, Vol 43, Num 5, pp 1397-1402, issn 0361-5235, 6 p.Article

MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR DetectionREDDY, M; PETERSON, J. M; LOFGREEN, D. D et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1274-1282, issn 0361-5235, 9 p.Conference Paper

Spectral responses of virtual Frisch-grid CdZnTe detectors and their relation to IR microscopy and X-ray diffraction topography dataBOLOTNIKOV, A. E; BABALOLA, S; GE YANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7079, pp 707903.1-707903.16, issn 0277-786X, isbn 978-0-8194-7299-1 0-8194-7299-9Conference Paper

Investigation on the Two-step Passivation Process for CdZnTe DetectorsDONGNI HU; LINJUN WANG; JIAHUA MIN et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7385, issn 0277-786X, isbn 978-0-8194-7666-1 0-8194-7666-8, 73851G.1-73851G.8Conference Paper

Array of virtual Frisch-grid CZT detectors with common cathode readout and pulse-height correctionBOLOTNIKOV, A. E; CAMARDA, G. S; KOPACH, O. V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7805, issn 0277-786X, isbn 978-0-8194-8301-0, 780504.1-780504.12Conference Paper

Macro and microscopic growth interface study of CdZnTe ingots by THM techniqueROY, U. N; WEILER, S; STEIN, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7805, issn 0277-786X, isbn 978-0-8194-8301-0, 780502.1-780502.8Conference Paper

Point Defects in CdZnTe Crystals Grown by Different TechniquesGUL, R; BOLOTNIKOV, A; KIM, H. K et al.Journal of electronic materials. 2011, Vol 40, Num 3, pp 274-279, issn 0361-5235, 6 p.Article

Scanning tunneling microscopy and spectroscopy of the semi-insulating CdZnTe(110) surfaceEGAN, C. K; CHOUBEY, A; BRINKMAN, A. W et al.Surface science. 2010, Vol 604, Num 19-20, pp 1825-1831, issn 0039-6028, 7 p.Article

Global Simulating the Detached Solidification Growth of CdZnTe Under Microgravity and GravityLAN PENG; ZHANG, Quan-Zhuang; FAN, Ju-Yan et al.Journal of superconductivity and novel magnetism. 2010, Vol 23, Num 6, pp 1205-1209, issn 1557-1939, 5 p.Conference Paper

Aqueous synthesis of high-fluorescence CdZnTe alloyed quantum dotsJINGWEI CHENG; DONGMEI LI; TAO CHENG et al.Journal of alloys and compounds. 2014, Vol 589, pp 539-544, issn 0925-8388, 6 p.Article

Zinc mapping in THM grown detector grade CZTROY, U. N; WEILER, S; STEIN, J et al.Journal of crystal growth. 2012, Vol 347, Num 1, pp 53-55, issn 0022-0248, 3 p.Article

Influence of surface preparation on CdZnTe nuclear radiation detectorsZHENG, Q; DIERRE, F; CROCCO, J et al.Applied surface science. 2011, Vol 257, Num 20, pp 8742-8746, issn 0169-4332, 5 p.Article

Response of the Internal Electric Field in CdZnTe to Illumination at Multiple Optical PowersWASHINGTON, Aaron L; TEAGUE, Lucile C; DUFF, Martine C et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2874-2879, issn 0361-5235, 6 p.Conference Paper

Transmission electron microscopy observations of twin boundaries and sub-boundary networks in bulk CdZnTe crystalsDONGMEI ZENG; WANQI JIE; TAO WANG et al.Journal of crystal growth. 2009, Vol 311, Num 19, pp 4414-4417, issn 0022-0248, 4 p.Article

Fast detection of precipitates and oxides on CdZnTe surfaces by spectroscopic ellipsometryBADANO, G; MILLION, A; CANAVA, B et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 1077-1084, issn 0361-5235, 8 p.Conference Paper

Characterization of CdZnTe after argon ion beam bombardmentBENSALAH, H; HORTELANO, V; PLAZA, J. L et al.Journal of alloys and compounds. 2012, Vol 543, pp 233-238, issn 0925-8388, 6 p.Article

Direct observation of extended dislocation in Cd0.9Zn0.1Te single crystals by HRTEMJIE SUN; LI FU.Journal of crystal growth. 2012, Vol 353, Num 1, pp 120-123, issn 0022-0248, 4 p.Article

Influence of Cd-rich Annealing on Defects in Te-rich CdZnTe MaterialsFENGFENG SHENG; JIANRONG YANG; SHIWEN SUN et al.Journal of electronic materials. 2014, Vol 43, Num 7, pp 2702-2708, issn 0361-5235, 7 p.Article

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